18 March 2008
SanDisk Corporation has announced the introduction of Multi-Level (MLC) NAND flash memory using 43 nanometer (nm) process technology co-developed with Toshiba Corporation in Japan.
This 43nm technology advancement provides twice the density per chip compared to 56nm 16Gigabit (Gb) process technology, thus lowering the die-cost while maintaining performance and reliability.
During the second quarter of 2008, SanDisk intends to begin shipping products using the industry's highest available density of single-chip MLC NAND flash memory. Shipments will start with 16Gigabit and will be followed by 32Gigabit in the second half of 2008.